Quick summary
A bipolar junction transistor (BJT) has three regions — emitter, base and collector — forming two p-n junctions. A small base current controls a much larger collector current, so a transistor can amplify signals or act as a switch. This topic covers transistor action, configurations, characteristics, α and β, biasing, load line and the CE amplifier.
Key points
- Types: n-p-n and p-n-p. The emitter is heavily doped, the base is thin and lightly doped, and the collector is moderately doped and largest.
- For normal (active) operation: emitter–base junction forward biased, collector–base junction reverse biased.
- Transistor action (n-p-n): electrons from the emitter enter the thin base; very few recombine; most are swept into the collector. So I_C is almost equal to I_E.
- Current relation: I_E = I_B + I_C.
- Three configurations: common base (CB), common emitter (CE) and common collector (CC).
- CE is the most used amplifier: high current, voltage and power gain; output is 180° out of phase with the input.
- CB: low input and high output resistance; current gain slightly less than 1. CC (emitter follower): voltage gain about 1; high input and low output resistance; used for impedance matching.
- Regions of operation: active (amplifier), saturation (switch ON), cut-off (switch OFF).
- Biasing fixes a stable operating point (Q-point). Fixed bias is simple but unstable with temperature; voltage-divider bias gives good stability.
- DC load line: straight line on output characteristics joining (V_CC, 0) and (0, V_CC/R_C). The Q-point should lie near its middle for undistorted amplification.
- h-parameters model a transistor for small signals: h_ie (input resistance), h_fe (current gain), h_re, h_oe.
Important terms
- α (current gain in CB) = I_C/I_E, slightly less than 1.
- β (current gain in CE) = I_C/I_B, typically 20–300.
- Q-point (कार्यबिंदू) – DC operating values (I_C, V_CE).
- Thermal runaway – rise in temperature increases I_C, which further heats the transistor.
Formulas
- I_E = I_B + I_C
- α = I_C/I_E; β = I_C/I_B; β = α/(1 − α); α = β/(1 + β)
- Fixed bias: I_B = (V_CC − V_BE)/R_B; I_C = βI_B; V_CE = V_CC − I_C R_C
- Load line: V_CE = V_CC − I_C R_C
- CE voltage gain (approx.): A_v = −β R_L/r_in (minus sign = phase reversal)
5 important questions
Q1. Why is the base of a transistor made thin and lightly doped?
So that very few carriers coming from the emitter recombine in the base. Almost all of them reach the collector, giving a large collector current and high current gain.
Q2. If α = 0.98, find β. If I_B = 50 μA, find I_C and I_E for β = 100.
β = α/(1 − α) = 0.98/0.02 = 49. For β = 100: I_C = βI_B = 100 × 50 μA = 5 mA; I_E = I_B + I_C = 5.05 mA.
Q3. Derive the relation between α and β.
- I_E = I_B + I_C. Divide by I_C: I_E/I_C = I_B/I_C + 1.
- Since α = I_C/I_E and β = I_C/I_B: 1/α = 1/β + 1.
- 1/β = 1/α − 1 = (1 − α)/α.
- So β = α/(1 − α), and α = β/(1 + β).
- As α → 1, β becomes large (α = 0.99 gives β = 99).
Q4. In a fixed-bias CE circuit, V_CC = 12 V, R_B = 300 kΩ, R_C = 2 kΩ, β = 100, V_BE = 0.7 V. Find I_B, I_C and V_CE.
- I_B = (V_CC − V_BE)/R_B = (12 − 0.7)/300000 = 11.3/300000 ≈ 37.7 μA.
- I_C = βI_B = 100 × 37.7 μA ≈ 3.77 mA.
- V_CE = V_CC − I_C R_C = 12 − 3.77 × 10⁻³ × 2000 = 12 − 7.53 ≈ 4.47 V.
- V_CE is well above saturation (~0.2 V), so the transistor is in the active region.
Q5. Explain the working of a CE amplifier.
- Voltage-divider bias sets the Q-point; coupling capacitors pass the AC signal; emitter bypass capacitor keeps gain high.
- Input signal adds to the base-emitter bias, changing I_B slightly.
- I_C changes β times more, so the drop across R_C changes a lot.
- Output V_CE = V_CC − I_C R_C: when input rises, I_C rises and output falls — 180° phase reversal.
- Gives high voltage and power gain; frequency response curve shows mid-band gain with fall at low and high frequencies.
Exam tip
Draw input and output characteristics for CE with the active, saturation and cut-off regions marked. In biasing numericals, always check V_CE at the end to confirm the active region.